tic10 6 se ries silicon contro lle d re ctif iers 1 apri l 197 1 - r evi sed sep tem be r 2002 spe cification s ar e subjec t t o ch ang e withou t notice. 5 a cont inuou s o n-state cu rr ent 30 a su rg e-cu rr ent glas s p ass iv ate d wa fer 400 v t o 800 v off-s tate voltage max i gt o f 200 a abs olu te maximu m rati ng s over op erati ng case temperat ure (unless otherwise no ted) notes: 1. these values apply when the gate-cathod e resistanc e r gk = 1 k ? . 2. these values apply for conti nu ous dc operation with resist iv e load . ab ove 80 c derate linearly to zero a t 110c. 3. thi s value may be a ppli ed continuousl y un de r single phas e 50 h z half-sine-wav e oper ation wi th r esi sti ve loa d. a bov e 80 c de rate linearly to zero a t 110c. 4. this value app li es for one 50 h z half- sine - wav e whe n the devi ce i s oper ating at (or below) the r at ed value o f pe ak reve rse volta ge and on-state curren t. surge ma y be repeated after t h e device has returned to or igi na l ther mal eq uil ibrium. 5. thi s valu e applies fo r a m axi mum aver agi ng tim e o f 2 0 ms. tinueulav lobmys gnitar repetiti ve pea k o ff -stat e vo ltage (see not e 1) tic106d tic106m ti c106s tic106n v drm 400 600 700 800 v repetitive pea k re ve rse voltage tic106d tic106m ti c106s tic106n v rrm 400 600 700 800 v i )2 eton ees( erutarepmet esac c08 )wo leb ro( ta tnerruc etats-no suounitnoc t(rms) 5 a averag e on-state curren t (180 con du ctio n angle) at (or bel ow) 80c case te mperature (se e not e 3) i t(av) 3.2 a surge on-s tate curr en t at i )4 eton ees( c52 )woleb ro( tsm 30 a peak positiv e ga te curren t (puls e w idth 300 i )s gm 0.2 a peak gate po wer dissi pa tion (puls e width 300 p )s gm 1.3 w averag e gat e po wer dissipation (see p )5 eton g(av) 0.3 w t egnar erutarepmet esac gnitarepo c -40 t o +110 c storage temperatur e range t stg -40 t o +125 c t sdnoces 01 rof esac morf mm 6.1 erutarepmet dael l 230 c k a g to-2 20 package (t op vi ew) pi n 2 is in electrical contac t with the m ou nti ng bas e. m dc 1aca 1 2 3 this series is currently availabl e, but not recommended for new designs.
tic106 series silicon controlled rectifiers 2
april 1971 - revised september 2002 specifications are subject to change without notice. note 6: this parameter must be measured using pulse techniques, t p = 300 s, duty cycle 2 %. voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off-state current v d = rated v drm r gk = 1 k ? t c = 110c 400 a i rrm repetitive peak reverse current v r = rated v rrm i g = 0 t c = 110c 1 ma i gt gate trigger current v aa = 12 v r l = 100 ? t p(g) 20 s 5 200 a v gt gate trigger voltage v aa = 12 v t p(g) 20 s r l = 100 ? r gk =1k ? t c = - 40c 1.2 v v aa = 12 v t p(g) 20 s r l = 100 ? r gk =1k ? 0.4 0.6 1 v aa = 12 v t p(g) 20 s r l = 100 ? r gk =1k ? t c = 110c 0.2 i h holding current v aa = 12 v initiating i t = 10 ma r gk =1k ? t c = - 40c 8 ma v aa = 12 v initiating i t = 10 ma r gk =1k ? 5 v t peak on-state voltage i t = 5 a (see note 6) 1.7 v dv/dt critical rate of rise of off-state voltage v d = rated v d r gk =1k ? t c = 110c 10 v/s thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 3.5 c/w r ja junction to free air thermal resist ance 62.5 c/w
tic106 series silicon controlled rectifiers 3
april 1971 - revised september 2002 specifications are subject to change without notice. thermal information figure 1. figure 2. figure 3. figure 4. average anode on-state current t c - case temperature - c 30 40 50 60 70 80 90 100 110 i t(av) - maximum average anode forward current - a 0 1 2 3 4 5 6 ti20aa derating curve = 180o continuous dc conduction angle 0 180 anode power dissipated i t - on-state current - a 110100 p a - anode power dissipated - w 1 10 100 ti20ab on-state current vs t j = 110c surge on-state current consecutive 50 hz half-sine-wave cycles 110100 i tm - peak half-sine-wave current - a 1 10 100 ti20ac cycles of current duration vs t c 80 c no prior device conduction gate control guaranteed transient thermal resistance consecutive 50 hz half-sine-wave cycles 110100 r jc(t) - transient thermal resistance - c/w 01 1 10 ti20ad cycles of current duration vs
tic106 series silicon controlled rectifiers 4
april 1971 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 5. figure 6. figure 7. gate trigger voltage t c - case temperature - c -50-25 0 255075100125 v gt - gate trigger voltage - v 02 04 06 08 0 1 tc20ab case temperature vs v aa = 12 v r l = 100 ? r gk = 1 k ? t p(g) 20 s holding current t c - case temperature - c -50 -25 0 25 50 75 100 125 i h - h o ldi ng c urren t - m a 0.1 1 10 tc20ad case temperature vs v aa = 12 v r gk = 1 k ? initiating i t = 10 ma peak on-state voltage i tm - peak on-state current - a 01 1 10 v tm - peak on-state voltage - v 0.0 0.5 1.0 1.5 2.0 2.5 tc20ae vs peak on-state current t c = 25 c t p = 300 s duty cycle 2 %
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